Methods of fabricating semiconductor devices having air-gap spacers

ABSTRACT

Methods of fabricating semiconductor devices are provided. The method includes forming a gate structure over a substrate, forming a disposable spacer on a sidewall of the gate structure, and forming a source region and a drain region at opposite sides of the gate structure. The method also includes depositing an interlayer dielectric layer around the disposable spacer, and forming a first hard mask on the interlayer dielectric layer. The method further includes removing an upper portion of the gate structure, and removing the disposable spacer to form a trench between the gate structure and the interlayer dielectric layer. In addition, the method includes sealing the trench to form an air-gap spacer, and forming a second hard mask on the gate structure.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.62/732,659, filed on Sep. 18, 2018, the entirety of which isincorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers over a semiconductor substrate, andpatterning the various material layers using lithography to form circuitcomponents and elements thereon.

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. As the semiconductorIC industry has progressed into nanometer process nodes in pursuit ofhigher device density, higher performance, and lower costs, challengesfrom both fabrication and design issues have resulted in the developmentof three-dimensional designs, such as a Fin Field Effect Transistor(FinFET). FinFET devices typically include semiconductor fins with highaspect ratios and in which channel and source/drain regions are formed.A gate is formed over and along the sides of the fin structure (e.g.,wrapping) utilizing the advantage of the increased surface area of thechannel to produce faster, more reliable, and better-controlledsemiconductor transistor devices. However, there are still variouschallenges in the fabrication of FinFET devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 shows a perspective view of a semiconductor device, in accordancewith some embodiments.

FIGS. 2A, 3, 4, 5, 6A, 7A, 8A, 9A, 10A, 11A and 12 show cross-sectionalviews of respective intermediate structures at various stages of anexemplary method for fabricating a semiconductor device taken along lineA-A in FIG. 1, in accordance with some embodiments.

FIGS. 2B, 6B, 7B, 8B, 9B, 10B and 11B show cross-sectional views ofintermediate structures at several stages of an exemplary method forfabricating a semiconductor device taken along line B-B in FIG. 1, inaccordance with some embodiments.

FIGS. 7C, 9C and 11C show cross-sectional views of intermediatestructures at several stages of an exemplary method for fabricating asemiconductor device taken along line C-C in FIG. 1, in accordance withsome embodiments.

FIG. 13 is a flow chart of an exemplary method of fabricating asemiconductor device, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as “beneath,” “below,”“lower,” “above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The fins described below may be patterned by any suitable method. Forexample, the fins may be patterned using one or more photolithographyprocesses, including double-patterning or multi-patterning processes.Generally, double-patterning or multi-patterning processes combinephotolithography and self-aligned processes, allowing patterns to becreated that have, for example, pitches smaller than what is otherwiseobtainable using a single, direct photolithography process. For example,in one embodiment, a sacrificial layer is formed over a substrate andpatterned using a photolithography process. Spacers are formed alongsidethe patterned sacrificial layer using a self-aligned process. Thesacrificial layer is then removed, and the remaining spacers may then beused to pattern the fins.

Embodiments disclosed herein relate generally to fabricatingsemiconductor devices having air-gap spacers. The air-gap spacers haveextreme-low dielectric constant (k value of about 1) and can provideexcellent electrical isolation for a gate structure. In someembodiments, disposable spacers are formed on the sidewalls of the gatestructure. The gate structure is etched-back to form a space between thedisposable spacers. The disposable spacer is thereby exposed through thespace. Thereafter, the disposable spacer is removed using an etchingprocess through the space to form a trench between the gate structureand an interlayer dielectric layer around the gate structure. Next, thetrench is sealed with a sealing spacer to form an air-gap spacer.

According to embodiments of the disclosure, the formation of the air-gapspacer can be integrated with a replacement gate process (also referredto as a gate-last process). Moreover, the air-gap spacer is formed withless loss of the height of the gate structure. The position of theair-gap spacer can be self-aligned with the height of the gatestructure. In addition, the formation of the air-gap spacer can becompatible with a gate-helmet process, in which a hard mask is formed onthe gate structure.

The foregoing broadly outlines some aspects of the embodiments describedherein. Some embodiments described herein are described in the contextof Fin Field Effect Transistor (FinFET) devices, and more particularly,in the context of forming air-gap spacers in FinFET devices. Somevariations of the exemplary methods and structures are described. Aperson having ordinary skill in the art will readily understand othermodifications may be made that are contemplated within the scope ofother embodiments. Implementations of some aspects of the presentdisclosure may be used in other processes and/or in other devices. Forexample, other devices may include planar FETs, π-gate FETs, Ω-gateFETs, Gate-All-Around (GAA) FETs or another device. Throughout thevarious views and illustrative embodiments, like reference numbers areused to designate like elements. Although embodiments of the method maybe described in a particular order, various other embodiments of themethod may be performed in any logical order and may include fewer ormore steps than what is described herein.

FIG. 1 illustrates a perspective (three-dimensional) view of asemiconductor device 100 such as an example of simplified FinFETs, inaccordance with some embodiments. Other aspects not illustrated in ordescribed with respect to FIG. 1 may become apparent from the followingfigures and description. The structure in FIG. 1 may be electricallyconnected or coupled in a manner to operate as, for example, onetransistor or more, such as four transistors.

The semiconductor device 100 includes multiple fins 106 a and 106 bprotruding from a semiconductor substrate 102. The semiconductorsubstrate 102 may be a bulk semiconductor substrate, or asemiconductor-on-insulator (SOI) substrate, which may be doped (e.g.,with a p-type or an n-type dopant) to form various well regions or dopedregions therein, or undoped. Generally, an SOI substrate includes alayer of a semiconductor material formed on an insulator layer. Theinsulator layer may be a buried oxide (BOX) layer, a silicon oxidelayer, or the like. The insulator layer is provided on a silicon orglass substrate. The semiconductor substrate 102 may be made of siliconor another semiconductor material. For example, the semiconductorsubstrate 102 is a silicon wafer. In some examples, the semiconductorsubstrate 102 is made of a compound semiconductor such as siliconcarbide, gallium arsenic, indium arsenide, or indium phosphide. In someexamples, the semiconductor substrate 102 is made of an alloysemiconductor such as GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, or GaInAsP.

Multiple isolation structures 104 are formed on the semiconductorsubstrate 102, and each of the fins 106 a and 106 b protrudes above theisolation structures 104 and is disposed between neighboring isolationstructures 104, as shown in FIG. 1 in accordance with some embodiments.The isolation structure 104 is, for example a shallow-trench-isolation(STI) structure, which surrounds the bottom portions of the fins 106 aand 106 b. The isolation structure 104 is disposed between neighboringpairs of fins 106 a and 106 b. In addition, a liner 103 is formedbetween the isolation structures 104 and the semiconductor substrate102. The liner 103 is also conformally deposited on the sidewalls of thefins 106 a and 106 b, and is disposed between the isolation structures104 and the fins 106 a and 106 b.

In some embodiments, the fins 106 a and 106 b are formed by patterningthe semiconductor substrate 102 using photolithography and etchingprocesses to form multiple trenches in the semiconductor substrate 102.Each of the trenches is between neighboring pairs of fins 106 a and 106b. The etching process may include a reactive ion etch (RIE), neutralbeam etch (NBE), inductive coupled plasma (ICP) etch, or a combinationthereof. A liner material layer is conformally deposited in thetrenches, on the semiconductor substrate 102 and along the sidewalls andthe top surfaces of the fins 106 a and 106 b. The liner material layermay be silicon oxide, silicon nitride or silicon oxynitride. The linermaterial layer may be deposited using chemical vapor deposition (CVD)process, physical vapor deposition (PVD) process or atomic layerdeposition (ALD) process.

Each of the trenches between neighboring pairs of fins 106 a and 106 bis filled with an insulating material. In some examples, the insulatingmaterial is for example silicon oxide, silicon nitride, siliconoxynitride, fluoride-doped silicate glass (FSG), or another lowdielectric constant (low-k) dielectric material. The trenches may befilled with the insulating material using a deposition process, such asCVD process, flowable CVD (FCVD) process, spin-on-glass (SOG) process,or another applicable process. After the deposition process, theinsulating material and the liner material layer may be planarized usinga chemical mechanical polishing (CMP) process to be coplanar with thetop surfaces of the fins 106 a and 106 b. Next, the filled insulatingmaterial and the liner material layer are recessed to form the isolationstructures 104 and the liner 103, as shown in FIG. 1 in accordance withsome embodiments. The insulating material and the liner material layermay be recessed using a dry etching process to form the isolationstructures 104 and the liner 103 that are lower than the top surfaces ofthe fins 106 a and 106 b. The dry etching process may use etching gasesincluding hydrogen fluoride (HF) gas, ammonia (NH₃) gas, and dilute gas(such as N₂ or Ar).

Multiple dummy gate structures 108 a and 108 b are formed across thefins 106 a and 106 b, along the sidewalls and over the top surfaces ofthe fins 106 a and 106 b, as shown in FIG. 1 in accordance with someembodiments. Furthermore, the dummy gate structures 108 a and 108 b areformed on the isolation structures 104. The longitudinal direction ofthe dummy gate structures 108 a and 108 b is perpendicular to thelongitudinal direction of the fins 106 a and 106 b. In some embodiments,each of the dummy gate structures 108 a and 108 b will be replaced witha replacement gate structure in a gate-last process.

Each of the dummy gate structures 108 a and 108 b includes a dummy gatedielectric layer 107 and a dummy gate electrode layer 109 over the dummygate dielectric layer 107. In some embodiments, the dummy gate electrodelayer 109 is made of poly-silicon. The dummy gate dielectric layer 107may be made of silicon oxide, silicon nitride, silicon oxynitride oranother low dielectric constant (low-k) dielectric material. The dummygate dielectric layers 107 and the dummy gate electrode layers 109 areformed independently using a deposition process, such as chemical vapordeposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD(MOCVD), or plasma enhanced CVD (PECVD). Then, those deposited layers ofthe dummy gate dielectric layers 107 and the dummy gate electrode layers109 are patterned into the dummy gate structures 108 a and 108 b usingphotolithography and etching processes. The etching process isanisotropic and may include a reactive ion etch (RIE), neutral beam etch(NBE), or another suitable etching process.

Gate spacers 110 are formed along the sidewalls of the dummy gatestructures 108 a and 108 b and over the fins 106 a and 106 b. The gatespacers 110 are also formed on the isolation structures 104. The gatespacers 110 may be formed by conformally depositing one or more gatespacer material layers and anisotropically etching the one or more gatespacer material layers. The one or more gate spacer material layers mayinclude silicon oxide (SiO₂), silicon nitride (SiN or Si₃N₄), siliconoxynitride (SiON), silicon carbon nitride (SiCN), or a combinationthereof, and may be deposited by chemical vapor deposition (CVD), atomiclayer deposition (ALD) or another deposition process. The etchingprocess may include a RIE, NBE, or another etching process.

According to embodiments of the disclosure, before forming an air-gapspacer, the gate spacer 110 includes a disposable spacer that is a mainportion of the gate spacer 110 and is formed over the other portions ofthe gate spacer 110. In some embodiments, the material of the disposablespacer includes an oxide-like material, such as silicon oxide (SiO₂),silicon oxynitride (SiON) or silicon oxycarbonitride (SiOCN). Thedisposable spacer of the gate spacer 110 will be removed using anetching process to form an air-gap spacer in following process steps.Details of the processes for forming the air-gap spacer are describedbelow in reference to the cross-sectional views shown in FIGS. 2A to11C.

Source and drain regions 112 are formed in active areas of the fins 106a and 106 b, at opposite sides of the dummy gate structure 108 a and atopposite sides of the dummy gate structure 108 b, as shown in FIG. 1 inaccordance with some embodiments. Some source and drain regions 112 maybe shared between two neighboring transistors, such as throughcoalescing the regions by epitaxial growth. For example, the neighboringFinFETs with the shared source and drain regions may be implemented astwo functional transistors. Other configurations in other examples mayimplement other numbers of functional transistors.

In some embodiments, the source and drain regions 112 are formed byimplanting dopants into the active regions of the fins 106 a and 106 busing the dummy gate structures 108 a and 108 b and the gate spacers 110as a mask. The source and drain regions 112 may be doped with suitabledopants such as p-type or n-type dopants which depend on the designedrequirement of the FinFETs. Exemplary dopants may be, for example boronfor a p-type FinFET, and phosphorus or arsenic for an n-type FinFET,although other dopants may be used.

In some embodiments, the source and drain regions 112 are epitaxialsource and drain structures. The epitaxial source and drain structuresmay be formed by recessing the active areas of the fins 106 a and 106 busing the dummy gate structures and the gate spacers 110 as a mask, andthen the epitaxial source and drain structures are epitaxially grown inthe recesses. The active areas of the fins 106 a and 106 b may berecessed using an etching process. The etching process may be isotropicor anisotropic, or may be selective with respect to one or morecrystalline planes of the material of the fins 106 a and 106 b. Hence,the recesses can have various cross-sectional profiles based on theetching process implemented. The etching process may be a dry etchingprocess, such as a RIE, NBE, or the like, or a wet etching process, suchas using tetramethylammonium hydroxide (TMAH), ammonium hydroxide(NH₄OH), or another etchant.

The epitaxial source and drain structures may include silicon germanium(SixGel-x, where x can be between approximately 0 and 1), siliconcarbide, silicon phosphorus, germanium, an III-V compound semiconductor,an II-VI compound semiconductor, or another epitaxial semiconductor. Forexample, the materials of an III-V compound semiconductor may includeInAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP or GaP. Theepitaxial source and drain structures may be formed by metal-organic CVD(MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), vaporphase epitaxy (VPE), selective epitaxial growth (SEG), or a combinationthereof. Each of the epitaxial source and drain structures has severalfacets. The epitaxial source and drain structures may be doped byin-situ doping during the epitaxial growth and/or by implantation afterthe epitaxial growth. Hence, the source and drain regions 112 may beformed by epitaxial growth, and possibly with implantation, at oppositesides of the dummy gate structures 108 a and 108 b.

FIG. 1 illustrates a reference cross-section along line A-A that is usedin FIGS. 2A, 3, 4, 5, 6A, 7A, 8A, 9A, 10A and 11A. Line A-A is on aplane that is perpendicular to the dummy gate structure 108 a and alonga channel region in the fin 106 a between the opposing source and drainregions 112. FIG. 1 also illustrates a reference cross-section alongline B-B that is used in FIGS. 2B, 6B, 7B, 8B, 9B, 10B and 11B. Line B-Bis on a plane along the dummy gate structure 108 a over two neighboringfins 106 a and 106 b. Moreover, FIG. 1 illustrates a referencecross-section along line C-C that is used in FIGS. 7C, 9C and 11C. LineC-C is on a plane that is perpendicular to the dummy gate structure 108a and on the isolation structure 104 between two neighboring fins 106 aand 106 b. In FIG. 1, for ease of depicting the figure, some componentsor features (for example, a contact etch stop layer and an interlayerdielectric layer) illustrated in the following figures are omitted toavoid obscuring other components or features. In addition, the dummygate structure 108 a is replaced with a replacement gate structure 120a, as shown in FIGS. 2A to 12 in accordance with some embodiments. Also,the dummy gate structure 108 b is replaced with another replacement gatestructure. The replacement gate structure 120 a includes a highdielectric constant (high-k) gate dielectric layer 122 and a metal gateelectrode layer 124. Details of the materials and processes for formingthe replacement gate structure 120 a are described below.

FIG. 2A illustrates a cross-sectional view of an intermediate structureat one stage of fabricating a semiconductor device taken along line A-Ain FIG. 1, in accordance with some embodiments. In a gate-last process,before replacing the dummy gate structure 108 a with the replacementgate structure 120 a, a contact etch stop layer (CESL) 132 isconformally deposited along the sidewalls of the gate spacers 110, andon the active areas of the fin 106 a such as the source and drainregions 112. The contact etch stop layer 132 is also deposited on theisolation regions 104 while a cross section is taken along line C-C inFIG. 1.

An interlayer dielectric (ILD) layer 134 is deposited on the contactetch stop layer 132 and around the gate spacers 110. Generally, thecontact etch stop layer 132 can provide a mechanism to stop an etchingprocess when forming contacts on the source and drain regions 112. Thecontact etch stop layer 132 may be formed of a dielectric materialhaving a different etch selectivity from the adjacent ILD layer 134. Thematerial of the contact etch stop layer 132 may include silicon nitride(SiN or Si₃N₄), silicon carbon nitride (SiCN) or a combination thereof,and may be deposited by CVD, PECVD, ALD, or another deposition process.In some examples, the contact etch stop layer 132 has a thickness in arange from about 2 nm to about 5 nm. The material of the ILD layer 134may include silicon dioxide or a low-k dielectric material (e.g., amaterial having a dielectric constant lower than that of silicondioxide). The low-k dielectric material may include silicon oxynitride,phosphosilicate glass (PSG), borosilicate glass (BSG),borophosphosilicate glass (BPSG), undoped silicate glass (USG),fluorinated silicate glass (FSG), silicon oxycarbide (SiOxCy),Spin-On-Glass (SOG) or a combination thereof. The ILD layer 134 may bedeposited by spin-on coating, CVD, Flowable CVD (FCVD), PECVD, PVD, oranother deposition process.

Afterwards, a planarization process, for example a chemical mechanicalpolishing (CMP) process, is performed on the ILD layer 134 and thecontact etch stop layer 132 to expose the dummy gate structure 108 a andthe gate spacers 110. After the planarization process, the top surfacesof the ILD layer 134 and the contact etch stop layer 132 are coplanarwith the top surfaces of the dummy gate structure 108 a and the gatespacers 110. Next, the dummy gate structure 108 a is removed in anetching process to form a space between the gate spacers 110. The dummygate electrode layer 109 and the dummy gate dielectric layer 107 may beremoved in one or more etching processes to form the space. The etchingprocesses may be a dry etching process such as a RIE or NBE process, awet etching process, or another etching process.

In some embodiments, the dummy gate dielectric layer 107 is partiallyremoved to remain a portion that is used as an interfacial layer (IL)121 for the replacement gate structure 120 a. Moreover, a portion 111 ofthe dummy gate dielectric layer 107 remains under the gate spacer 110.In some embodiments, the gate spacer 110 includes an inner sidewallspacer 113 and a disposable spacer 115 over the inner sidewall spacer113. The remaining portion 111 of the dummy gate dielectric layer 107 isdisposed under the inner sidewall spacer 113. The material of the innersidewall spacer 113 includes silicon carbon nitride (SiCN), siliconnitride (SiN or Si₃N₄) or a combination thereof, and may be deposited byCVD, PECVD, ALD, or another deposition process. The material of thedisposable spacer 115 includes silicon oxide (SiO₂), silicon oxynitride(SiON) or a combination thereof, and may be deposited by CVD, PECVD,ALD, or another deposition process. In some examples, the disposablespacer 115 has a thickness in a range from about 2 nm to about 3 nm. Theinner sidewall spacer 113 has a thickness in a range from about 1 nm toabout 2 nm. The deposited material layers of the disposable spacer 115and the inner sidewall spacer 113 are etched to form the gate spacer 110using RIE, NBE, or another etching process. In addition, the remainingportion of the dummy gate dielectric layer 107 that is used as theinterfacial layer (IL) 121 may be further extended downward by a thermalor chemical oxidation process, such that the bottom surface of theinterfacial layer 121 is lower than that of the remaining portion 111.In other examples, the interfacial layer 121 may be omitted.

Afterwards, the replacement gate structure 120 a is formed in the spacebetween the gate spacers 110, as shown in FIG. 2A in accordance withsome embodiments. The replacement gate structure 120 a includes a highdielectric constant (high-k) gate dielectric layer 122 that isconformally deposited on the sidewalls and the bottom surface of thespace. For example, the gate dielectric layer 122 is deposited over theinterfacial layer 121, along the inner sidewalls of the gate spacers110, and over top surfaces of the gate spacers 110, the contact etchstop layer 132, and the ILD layer 134. FIG. 2B illustrates across-sectional view of an intermediate structure at one stage offabricating a semiconductor device taken along line B-B in FIG. 1, inaccordance with some embodiments. The gate dielectric layer 122 is alsoconformally deposited along the sidewalls and on the top surfaces of thefins 106 a and 106 b, and on the isolation structures 104, as shown inFIG. 2B in accordance with some embodiments.

The gate dielectric layer 122 includes silicon oxide, silicon nitride, ahigh-k dielectric material, multilayers thereof, or other dielectricmaterial. The high-k dielectric material may have a k-value greater thanabout 7.0. The high-k dielectric material may include a metal oxide ofor a metal silicate of Hf, Al, Zr, La, Mg, Ba, Ti, Pb, or a combinationthereof. The gate dielectric layer 122 may be deposited by ALD, PECVD,molecular-beam deposition (MBD), or another deposition process. In someexamples, the gate dielectric layer 122 has a thickness in a range fromabout 15 Å to about 25 Å.

The replacement gate structure 120 a also includes a gate electrodelayer 124 over the gate dielectric layer 122. In some embodiments, thegate electrode layer 124 includes multiple layers, such as a cappinglayer, a barrier layer, a work-function tuning layer and a metal fillmaterial. The capping layer, the barrier layer and the work-functiontuning layer are conformally deposited over the gate dielectric layer122 in sequence. The capping layer may include titanium nitride,titanium-silicon nitride, titanium-carbon nitride, titanium-aluminumnitride, tantalum nitride, tantalum-silicon nitride, tantalum-carbonnitride, aluminum nitride, or a combination thereof, and may bedeposited by ALD, PECVD, MBD, or another deposition process. In someexamples, the capping layer may have a thickness in a range from about 5Å to about 25 Å. The barrier layer may include tantalum nitride,tantalum-silicon nitride, tantalum-carbon nitride, tantalum-aluminumnitride, titanium nitride, titanium-silicon nitride, titanium-carbonnitride, titanium-aluminum nitride, aluminum nitride, or a combinationthereof, and may be deposited by ALD, PECVD, MBD, or another depositionprocess. In some examples, the barrier layer may have a thickness in arange from about 5 Å to about 25 Å.

The work-function tuning layer may include titanium aluminum carbide(TiAlC), a titanium aluminum alloy (TiAl), tantalum-aluminum carbide, ora combination thereof, and may be deposited by ALD, PECVD, MBD, oranother deposition process. In some examples, the work-function tuninglayer may have a thickness in a range from about 10 Å to about 60 Å.Other examples may have various other configurations of work-functiontuning layers to achieve a desired performance of the FinFET to beformed. For example, any different number of work-function layers havingvarious materials and/or thicknesses may be used. In some instances, forexample, a p-type FinFET and an n-type FinFET may have differentwork-function tuning layers. The metal fill material is deposited tofill the remaining space over the work-function tuning layer. The metalfill material may include tungsten, cobalt, ruthenium, aluminum, copper,multi-layers thereof, or a combination thereof. The metal fill materialmay be deposited by ALD, PECVD, MBD, PVD, or another deposition process.

In addition, excess portions of the gate dielectric layer 122 and thegate electrode layer 124 over the top surfaces of the ILD layer 134, thecontact etch stop layer 132 and the gate spacers 110 may be removed in aplanarization process, such as a CMP process. The result of theplanarization process is illustrated as the structure of FIG. 2A inaccordance with some embodiments. The top surface of the replacementgate structure 120 a is coplanar with the top surfaces of the ILD layer134, the contact etch stop layer 132 and the gate spacers 110.

FIG. 3 illustrates a cross-sectional view of an intermediate structureat one stage of fabricating a semiconductor device following FIG. 2A,which is taken along line A-A in FIG. 1, in accordance with someembodiments. In this stage, a cross-sectional view taken along line B-Bin FIG. 1 is the same as that of FIG. 2B. The upper portion of the ILDlayer 134 is removed using an etching process to form a recess 136, asshown in FIG. 3 in accordance with some embodiments. The recess 136 hasa depth D1 below the top surface of the replacement gate structure 120a. In some examples, the depth D1 is in a range from about 10 nm toabout 30 nm. In the etching process, the material of the ILD layer 134has a high etch selectivity while compared with the materials of thereplacement gate structure 120 a, the contact etch stop layer 132 andthe gate spacer 110. Moreover, the contact etch stop layer 132 and thegate spacer 110 may be slightly etched. The etching process may be a dryetching process, such as a remote plasma etching process that may use agas mixture of HF-based gas, N₂ and NH₃ to generate radicals by remoteplasma source (RPS). Alternatively, the etching process may be a wetetching process using a chemical etchant that has a high selectivity tothe material of the ILD layer 134 while compared with the materials ofthe replacement gate structure 120 a and the disposable spacer 115. Thechemical etchant is for example hydrofluoric acid (HF).

FIG. 4 illustrates a cross-sectional view of an intermediate structureat one stage of fabricating a semiconductor device following FIG. 3,which is taken along line A-A in FIG. 1, in accordance with someembodiments. In this stage, a cross-sectional view taken along line B-Bin FIG. 1 is the same as that of FIG. 2B. A hard mask 138 is formed inthe recess 136 of FIG. 3 and on the recessed ILD layer 134. The materialof the hard mask 138 may include metal oxide, silicon oxycarbide (SiOC),silicon carbon nitride (SiCN), silicon nitride (SiN) or siliconoxycarbon nitride (SiOCN), and is selected based on the material used inthe disposable spacer 115. The material of the disposable spacer 115 hasan etch selectivity that is greater than about 150 to the material ofthe hard mask 138 in the etching process that removes the disposablespacer 115. The hard mask 138 may be formed by depositing the materiallayer of the hard mask 138 and then using a planarization process, forexample CMP process, to remove excess portions of the deposited materiallayer over the replacement gate structure 120 a, the gate spacers 110and the contact etch stop layer 132. Thereafter, the top surface of thehard mask 138 is coplanar with the top surfaces of the replacement gatestructure 120 a, the gate spacers 110 and the contact etch stop layer132.

FIG. 5 illustrates a cross-sectional view of an intermediate structureat one stage of fabricating a semiconductor device following FIG. 4,which is taken along line A-A in FIG. 1, in accordance with someembodiments. The replacement gate structure 120 a is etched back to forma space 126 between the disposable spacers 115. The space 126 has adepth D2 below the top surface of the hard mask 138. In some examples,the depth D2 is in a range from about 50 nm to about 60 nm. Both thegate dielectric layer 122 and the gate electrode layer 124 are etchedback. The upper portion of the replacement gate structure 120 a of FIG.4 is removed in an etching process. The material of the replacement gatestructure 120 a has an etch selectivity that is greater than about 5 tothe material of the hard mask 138 in the etching process of removing theupper portion of the replacement gate structure 120 a. In some examples,the etch selectivity greater than about 5 can avoid or reduce gateheight loss. During the etching process used for etching back thereplacement gate structure 120 a, the hard mask 138 can protect the ILDlayer 134. The etching process may be a dry etching process, such as aplasma etching process using high-density chlorine-containing plasmas.The etching process is anisotropic. In this stage, a cross-sectionalview taken along line B-B in FIG. 1 is similar to the structure of FIG.2B, except that the replacement gate structure 120 a is etched back tohave a height that is lower than the height of the replacement gatestructure 120 a in FIG. 2B.

FIG. 6A illustrates a cross-sectional view of an intermediate structureat one stage of fabricating a semiconductor device following FIG. 5,which is taken along line A-A in FIG. 1, in accordance with someembodiments. FIG. 6B illustrates a cross-sectional view of theintermediate structure at this stage of fabricating a semiconductordevice taken along line B-B in FIG. 1, in accordance with someembodiments. A metal cap layer 128 is selectively deposited on theetched-back replacement gate structure 120 a of FIG. 5. The metal caplayer 128 is deposited on the gate electrode layer 124 and the gatedielectric layer 122, and may fill a concave surface of the etched-backreplacement gate structure 120 a, as shown in FIG. 6A in accordance withsome embodiments. Also, the metal cap layer 128 is deposited on the gateelectrode layer 124 while taken along line B-B in FIG. 1, as shown inFIG. 6B in accordance with some embodiments. In some embodiments, themetal cap layer 128 is a tungsten (W) layer that may be deposited usinga fluorine-free tungsten-containing precursor, for example W(CO)₆, in aCVD, PECVD or ALD process. In some examples, the metal cap layer 128 hasa thickness in a range from about 1 nm to about 5 nm.

Most of the disposable spacer 115 is exposed through the space 126 abovethe etched-back replacement gate structure 120 a, as shown in FIG. 6A inaccordance with some embodiments. Next, the disposable spacer 115 isremoved to form a trench 117 between the replacement gate structure 120a and the ILD layer 134, as shown in FIG. 7A in accordance with someembodiments, which is taken along line A-A in FIG. 1. In addition, thecontact etch stop layer 132 is disposed between the trench 117 and theILD layer 134. The disposable spacer 115 is selectively removed using anetching process, and a portion of the inner sidewall spacer 113 remains.

Moreover, the metal cap layer 128 can protect the replacement gatestructure 120 a during the etching process. The material of thedisposable spacer 115 has an etch selectivity to the materials of theinner sidewall spacer 113, the contact etch stop layer 132, the hardmask 138, the replacement gate structure 120 a and the source and drainregions 112 in the etching process. In some examples, the disposablespacer 115 has an etch selectivity that is greater than about 150. Theetching process for removing the disposable spacer 115 is an isotropicetching process, such as a remote plasma etching process that may use agas mixture of HF-based gas, F₂, H₂O, 0 ₂, and H₂ to generate radicalsby remote plasma source (RPS). Alternatively, the etching process may bea wet etching process that uses a Fluorine (F)-based chemical etchanthaving a high selectivity to the disposable spacer 115. The F-basedchemical etchant is for example hydrofluoric acid (HF). In someexamples, the trench 117 has a width W that is in a range from about 3nm to about 5 nm.

FIG. 7B illustrates a cross-sectional view of the intermediate structureof FIG. 7A at this stage of fabricating a semiconductor device takenalong line B-B in FIG. 1, in accordance with some embodiments. Thestructure of FIG. 7B is the same as that of FIG. 6B. FIG. 7C illustratesa cross-sectional view of the intermediate structure of FIG. 7A at thisstage of fabricating a semiconductor device taken along line C-C in FIG.1, in accordance with some embodiments. In some examples, the trench 117has a depth D3 that is in a range from about 50 nm to about 70 nm in thecross-section taken along line C-C in FIG. 1.

Afterwards, a sealing spacer material layer 130 is deposited on thestructures of FIGS. 7A and 7B. The sealing spacer material layer 130 isconformally deposited on the hard mask 138, along the sidewall of thecontact etch stop layer 132, and on the metal cap layer 128, as shown inFIG. 8A in accordance with some embodiments, which is taken along lineA-A in FIG. 1. In some embodiments, the sealing spacer material layer130 may extend into the trench 117 with a seal depth D4 to seal thetrench 117 and to form an air-gap spacer 119. In some embodiments, thesealing spacer material layer 130 may not extend into the trench 117 toseal the trench 117 and to form an air-gap spacer 119. In some examples,the seal depth D4 is in a range from about 0 nm to less than the heightof the replacement gate structure 120 a, for example about 5 nm. Theheight of the replacement gate structure 120 a is above the top surfacesof the source and drain regions 112. The lowest surface of the sealingspacer material layer 130 is above the top surfaces of the source anddrain regions 112.

In some examples, after refilling the trench 117, the air-gap spacer 119has a width in a range from about 1 nm to about 4 nm. The width of theair-gap spacer 119 is greater than 20% of the distance between the gatedielectric layer 122 and the source or drain region 112 for performancetolerance of the FinFET. In some embodiments, the sealing spacermaterial layer 130 is made of a low-k dielectric material that has a kvalue lower than about 5. The low-k dielectric material of the sealingspacer material layer 130 is for example silicon oxycarbon (SiOC),silicon oxycarbon nitride (SiOCN), silicon oxynitride (SiON), or anotherlow-k dielectric material. In some embodiments, the material of thesealing spacer material layer 130 includes SiN or SiCN. The sealingspacer material layer 130 may be deposited in a low-temperature (LT)deposition process, such as a CVD process performed at a temperaturelower than 500° C. In some examples, the sealing spacer material layer130 has a thickness in a range from about 6 nm to about 8 nm. Inaddition, the sealing spacer material layer 130 is deposited on themetal cap layer 128 over the replacement gate structure 120 a, as shownin FIG. 8B in accordance with some embodiments, which is taken alongline B-B in FIG. 1.

Next, the sealing spacer material layer 130 is pulled-back to form asealing spacer 131, as shown in FIG. 9A in accordance with someembodiments, which is taken along line A-A in FIG. 1. The portions ofthe sealing spacer material layer 130 on the hard mask 138 and the metalcap layer 128 are removed. In addition, a portion of the sealing spacermaterial layer 130 on the upper sidewall of the contact etch stop layer132 is removed to form a recess 118 above the sealing spacer 131. Insome embodiments, the sealing spacer material layer 130 is pulled-backfrom the top surface of the hard mask 138 with a distance D5. In someexamples, the distance D5 is in a range from about 30 nm to about 40 nm.The sealing spacer material layer 130 may be pulled-back using a plasmaetching process. The material of the sealing spacer material layer 130has an etch selectivity to the materials of the contact etch stop layer132, the hard mask 138 and the replacement gate structure 120 a in theplasma etching process. In some examples, the etch selectivity of thesealing spacer material layer 130 is greater than about 80.

In addition, the sealing spacer material layer 130 on the metal caplayer 128 in a cross-section taken along line B-B in FIG. 1 is removed,as shown in FIG. 9B in accordance with some embodiments. FIG. 9Cillustrates a cross-sectional view of the intermediate structure of FIG.9A at this stage of fabricating a semiconductor device taken along lineC-C in FIG. 1, in accordance with some embodiments. The air-gap spacer119 is disposed under the sealing spacer 131. In some examples, theair-gap spacer 119 has a depth in a range from about 50 nm to about 70nm in the cross-section taken along line C-C in FIG. 1.

Afterwards, a hard mask 140 is formed on the replacement gate structure120 a, as shown in FIG. 10A in accordance with some embodiments, whichis taken along line A-A in FIG. 1. The material layer of the hard mask140 is deposited to fill the space 126 (FIG. 9A) above the replacementgate structure 120 a and the recesses 118 (FIG. 9A) above the sealingspacers 131. Thereafter, the excess portion of the deposited materiallayer of the hard mask 140 on the hard mask 138 is removed in aplanarization process, for example a CMP process. After theplanarization process, the hard mask 140 is coplanar with the hard mask138 on the ILD layer 132. Moreover, the hard mask 140 is formed over thesealing spacers 131. The material layer of the hard mask 140 may includesilicon oxynitride (SiON), silicon nitride (SiN), silicon carbide (SiC),silicon carbon nitride (SiCN), or a combination thereof, and may bedeposited by CVD, PVD, ALD, or another deposition process. In addition,the hard mask 140 is deposited on the metal cap layer 128 in across-section taken along line B-B in FIG. 1, as shown in FIG. 10B inaccordance with some embodiments.

Next, the hard mask 138 on the ILD layer 132 and a portion of the hardmask 140 above the sealing spacer 131 are removed, as shown in FIG. 11Ain accordance with some embodiments, which is taken along line A-A inFIG. 1. The hard mask 138 and the portion of the hard mask 140 areremoved in a planarization process, for example a CMP process. Inaddition, a portion of the ILD layer 134 and a portion of the contactetch stop layer 132 above the sealing spacer 131 are removed in theplanarization process until stop at the top surface of the sealingspacer 131. After the planarization process, the top surfaces of thehard mask 140, the sealing spacers 131, the contact etch stop layer 132and the ILD layer 134 are coplanar.

FIG. 11B illustrates a cross-sectional view of the structure of FIG. 11Aat this stage of fabricating a semiconductor device taken along line B-Bin FIG. 1, in accordance with some embodiments. After planarizationprocess, the hard mask 140 in FIG. 11B has a thickness T2 that isthinner than the thickness T1 of the hard mask 140 in FIG. 10B.

FIG. 11C illustrates a cross-sectional view of the structure of FIG. 11Aat this stage of fabricating a semiconductor device taken along line C-Cin FIG. 1, in accordance with some embodiments. The cross-section takenalong line C-C in FIG. 1 is at the location of the isolation structure104. In the cross-section, the air-gap spacers 119 under the sealingspacers 131 and above the inner sidewall spacer 113 have a depth D6. Insome examples, the depth D6 is in a range from about 50 nm to about 70nm. In addition, the sealing spacers 131 have a seal depth D7 below thetop surface of the replacement gate structure 120 a. In some examples,the seal depth D7 is in a range from about 0 nm to a gate height H. Thegate height H is above the top surfaces of the source and drain regions112. For example, the seal depth D7 is from about 0 nm to about 1 nm. Inaddition, the sealing spacer 131. In some examples, the air-gap spacers119 have a width W2 that is greater than about 20% of the distancebetween the gate dielectric layer 122 and the source or drain region 112for performance tolerance of FinFET. In some examples, the width W2 ofthe air-gap spacer 119 is in a range from about 1 nm to about 4 nm.

Afterwards, contacts 142 to the source and drain regions 112 are formedin the ILD layer 134, as shown in FIG. 12 in accordance with someembodiments, which is taken along line A-A in FIG. 1. The contacts 142are formed to pass through the ILD layer 134 and to be in contact withthe source and drain regions 112. The contacts 142 are formed by formingcontact holes in the ILD layer 134 using photolithography and etchingprocesses. The source and drain regions 112 are exposed through thecontact holes. Thereafter, the contact holes are filled with aconductive material using a depositing process. Moreover, in each of thecontact holes, a liner may be conformally deposited on the sidewalls andthe bottom surface of the contact hole before filling the contact holewith the conductive material. The liner may be used as a diffusionbarrier layer, an adhesion layer, or a combination thereof. The materialof the liner may include titanium, titanium nitride, tantalum, tantalumnitride, or the like. The liner may be deposited by ALD, PECVD, MBD,PVD, or another deposition technique. In addition, an anneal process maybe performed to facilitate a reaction between some portions of the linerand the source and drain regions 112 to form silicide regions at therespective source and drain regions 112. The conductive materialincludes a metal, such as cobalt, tungsten, copper, aluminum, gold,silver, alloys thereof, or a combination thereof, and may be depositedby CVD, ALD, PVD, or another deposition technique.

Next, excess portion of the conductive material over the ILD layer 134is removed in a planarization process, such as a CMP process. Thecontacts 142 are formed to be coplanar with the ILD layer 134, thecontact etch stop layer 132, the sealing spacers 131 and the hard mask140. According to the embodiments, the hard mask 140 on the replacementgate structure 120 a can be used in a self-aligned contact (SAC) processfor forming the contacts 142 to the source and drain regions 112.

FIG. 13 is a flow chart of an exemplary method 200 of fabricating asemiconductor device, in accordance with some embodiments. In block 201of the method 200 and with reference to FIG. 2A, a gate structure isformed over a substrate. In some embodiments, the gate structure is areplacement gate structure 120 a formed in a gate-last process and overthe semiconductor substrate 102. In some embodiments, the replacementgate structure 120 a is formed on the fin 106 a that protrudes from thesemiconductor substrate 102. The replacement gate structure 120 aincludes a gate dielectric layer 122 and a gate electrode layer 124 overthe gate dielectric layer 122. In some embodiments, the gate dielectriclayer 122 is a high-k gate dielectric layer and the gate electrode layer124 is a metal gate electrode layer.

In block 203 of the method 200 (and still referring to FIG. 2A), adisposable spacer is formed on the sidewall of the gate structure. Thedisposable spacer 115 formed on the sidewall of the replacement gatestructure 120 a will be removed to form an air-gap spacer in thefollowing processes. The material of the disposable spacer 115 has anetch selectivity that is greater than about 150 to the materials ofseveral elements around the disposable spacer 115 in an etching processfor removing the disposable spacer 115.

In block 205 of the method 200 (and still referring to FIG. 2A), sourceand drain regions are formed at opposite sides of the gate structure. Insome embodiments, the source and drain regions 112 formed at oppositesides of the replacement gate structure 120 a are epitaxial source anddrain structures. In some embodiments, the source and drain regions 112are formed in the fin 106 a. The materials and the processes of formingthe source and drain regions 112 are the same as or similar to thosedescribed with respect to FIG. 2A, and the details are not repeatedherein.

In block 207 of the method 200 (and still referring to FIG. 2A), aninterlayer dielectric (ILD) layer 134 is deposited around the disposablespacer 115. Also, the ILD layer 134 is deposited on the source and drainregions 112. In some embodiments, in a gate-last process, the ILD layer134 is deposited around the disposable spacer 115 before forming thereplacement gate structure 120 a. The ILD layer 134 is deposited arounda dummy gate structure that is surrounded by the disposable spacers 115.Next, the replacement gate structure 120 a is formed at the place inwhich the dummy gate structure is removed.

In block 209 of the method 200 and with reference to FIG. 4, a firsthard mask 138 is formed on the interlayer dielectric (ILD) layer 134.The first hard mask 138 can protect the ILD layer 134 during the etchingprocess for removing the disposable spacers 115. The materials and theprocesses of forming the first hard mask 138 are the same as or similarto those described with respect to FIGS. 3 and 4, and the details arenot repeated herein.

In block 211 of the method 200 and with reference to FIG. 5, an upperportion of the gate structure (also referred to as a replacement gatestructure 120 a) is removed in an etch-back process. As a result, aspace 126 is formed between the disposable spacers 115. According to theembodiments, the disposable spacers 115 are exposed through the space126.

In block 213 of the method 200 and with reference to FIGS. 7A and 7C,the disposable spacers 115 are removed using an etching process to forma trench 117 between the gate structure (also referred to as areplacement gate structure 120 a) and the interlayer dielectric (ILD)layer 134. In the etching process, the material of disposable spacer 115has an etch selectivity to the materials of the contact etch stop layer132, the first hard mask 138 on the ILD layer 134, the inner sidewallspacer 113 under the disposable spacers 115, the replacement gatestructure 120 a, and the source and drain regions 112. In some examples,the etch selectivity is greater than about 150. Moreover, according tothe embodiments of the disclosure, the disposable spacers 115 exposedthrough the space 126 can help the removing of the disposable spacers115.

In block 215 of the method 200 and with reference to FIGS. 8A, 9A and9C, the trench 117 is sealed by a sealing spacer 131 to form an air-gapspacer 119. According to the embodiments of the disclosure, the positionof the air-gap spacer 119 can be self-aligned with the height of thereplacement gate structure 120 a.

In block 217 of the method 200 and with reference to FIGS. 10A and 11A,a second hard mask 140 is formed on the gate structure (also referred toas a replacement gate structure 120 a). The materials and the processesof forming the second hard mask 140 are the same as or similar to thosedescribed with respect to FIGS. 10A and 11A, and the details are notrepeated herein.

According to the embodiments of the disclosure, an air-gap spacer 119 isformed by using a gate etch-back process to create a space 126 to exposea disposable spacer 115, and then removing the disposable spacer 115through the space 126 using an etching process to form a trench 117between a replacement gate structure 120 a and an ILD layer 134.Thereafter, the trench 117 is sealed with a sealing spacer 131 to formthe air-gap spacer 119. Moreover, before the gate etch-back process andremoving the disposable spacer 115, a hard mask 138 is formed on the ILDlayer 134 to protect the ILD layer 134 during the gate etch-back processand the removing of the disposable spacer 115. Accordingly, utilizingthe gate etch-back process to combine with the hard mask 138 on the ILDlayer 134, the air-gap spacer 119 can be formed without additionalphoto-resist layer. The cost of fabricating the semiconductor devices isthereby reduced.

Furthermore, utilizing the gate etch-back process for forming theair-gap spacer 119, the depth of removing the disposable spacer 115 isreduced, and the gate-height loss is also reduced. Moreover, theposition of the air-gap spacer 119 can be self-aligned with the heightof the replacement gate structure 120 a. Therefore, the performancevariation of the semiconductor devices is reduced. In addition, the hardmask 138 is formed on the ILD layer 134 through a shallow recess.Therefore, the gate-height loss is reduced. In some examples, thegate-height loss is less than about 10 nm in the fabrication of thesemiconductor devices in accordance with some embodiments of thedisclosure.

In addition, according to the embodiments of the disclosure, a hard mask140 is formed on the replacement gate structure 120 a during thefabrication processes of the air-gap spacer 119. Therefore, thefabrication processes of the air-gap spacer 119 can be compatible with agate-helmet process. The gate-helmet process is used for advancedmiddle-end-of-line (MEOL) process, which is a self-aligned contact (SAC)process for forming contacts to source and drain regions. Therefore,there is no need for an additional gate-helmet process according to theembodiments of the disclosure.

Moreover, according to the embodiments of the disclosure, after theair-gap spacer 119 is formed, there is no need to deposit a contact etchstop layer and an ILD layer. Therefore, the cost of fabricating thesemiconductor devices is reduced. According to the benefits mentionedabove, the embodiments of the disclosure are suitable for semiconductordevices at multiple technology nodes of 16 nm (N16), N10, N7, N5, N3 andbeyond.

In some embodiments, a method of fabricating a semiconductor device isprovided. The method includes forming a gate structure over a substrate,forming a disposable spacer on a sidewall of the gate structure, andforming a source region and a drain region at opposite sides of the gatestructure. The method also includes depositing an interlayer dielectriclayer around the disposable spacer, and forming a first hard mask on theinterlayer dielectric layer. The method further includes removing anupper portion of the gate structure, and removing the disposable spacerto form a trench between the gate structure and the interlayerdielectric layer. In addition, the method includes sealing the trench toform an air-gap spacer, and forming a second hard mask on the gatestructure.

In some embodiments, a method of fabricating a semiconductor device isprovided. The method includes forming a gate structure on a fin thatprotrudes from a semiconductor substrate, and depositing disposablespacers on sidewalls of the gate structure. The method also includesforming a source region and a drain region in the fin and at oppositesides of the gate structure, and depositing an interlayer dielectriclayer over the source region and the drain region. The method furtherincludes removing an upper portion of the gate structure to form a spacebetween the disposable spacers. In addition, the method includesremoving the disposable spacer to form a trench between the gatestructure and the interlayer dielectric layer, and sealing the trench toform an air-gap spacer.

In some embodiments, a semiconductor device is provided. Thesemiconductor device includes a fin protruding from a semiconductorsubstrate, and a gate structure over the fin. The semiconductor devicealso includes a source region and a drain region in the fin and atopposite sides of the gate structure. The semiconductor device furtherincludes a gate spacer on a sidewall of the gate structure, in which thegate spacer includes an air-gap spacer and a sealing spacer above theair-gap spacer. In addition, the semiconductor device includes a hardmask on the gate structure, in which the hard mask has a top surfacethat is coplanar with the sealing spacer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of fabricating a semiconductor device,comprising: forming a gate structure over a substrate; forming adisposable spacer on a sidewall of the gate structure; forming a sourceregion and a drain region at opposite sides of the gate structure;depositing an interlayer dielectric layer around the disposable spacer;removing an upper portion of the interlayer dielectric layer to form arecess; depositing a material layer in the recess to form a first hardmask on the interlayer dielectric layer; removing an upper portion ofthe gate structure; removing the disposable spacer to form a trenchbetween the gate structure and the interlayer dielectric layer; sealingthe trench to form an air-gap spacer; and forming a second hard mask onthe gate structure.
 2. The method as claimed in claim 1, wherein thetrench has a height that is level with the height of the gate structureand the air-gap spacer is formed to be self-aligned with the height ofthe gate structure.
 3. The method as claimed in claim 1, whereinremoving the upper portion of the gate structure forms a space thatexposes the disposable spacer, and the disposable spacer is removedusing an etching process.
 4. The method as claimed in claim 1, whereinthe first hard mask is formed on the interlayer dielectric layer beforeremoving the upper portion of the gate structure.
 5. The method asclaimed in claim 1, further comprising depositing a metal cap layer onthe gate structure after the upper portion of the gate structure isremoved and before removing the disposable spacer.
 6. The method asclaimed in claim 1, wherein sealing the trench comprises: depositing adielectric layer on sidewalls of the interlayer dielectric layer; andremoving an upper portion of the dielectric layer to form a sealingspacer.
 7. The method as claimed in claim 6, wherein forming the secondhard mask on the gate structure comprises: depositing a material layerof the second hard mask over the sealing spacer and over the gatestructure; and planarizing the material layer of the second hard mask tobe coplanar with the first hard mask.
 8. The method as claimed in claim6, further comprising removing the first hard mask and a portion of thesecond hard mask using a planarization process, wherein the sealingspacer has a top surface that is coplanar with top surfaces of theinterlayer dielectric layer and the second hard mask after theplanarization process.
 9. The method as claimed in claim 1, wherein thefirst hard mask layer is on the interlayer dielectric layer afterremoving the disposable spacer.
 10. A method of fabricating asemiconductor device, comprising: forming a gate structure on a fin thatprotrudes from a semiconductor substrate; depositing disposable spacerson sidewalls of the gate structure; forming a source region and a drainregion in the fin and at opposite sides of the gate structure;depositing an interlayer dielectric layer over the source region and thedrain region; removing an upper portion of the gate structure to form aspace between the disposable spacers; depositing a metal cap layer onthe gate structure, wherein a top surface of the metal cap layer islower than a top surface of the disposable spacer; removing thedisposable spacer to form a trench between the gate structure and theinterlayer dielectric layer; and sealing the trench to form an air-gapspacer.
 11. The method as claimed in claim 10, wherein the disposablespacer is exposed through the space, and the disposable spacer isremoved using an etching process through the space.
 12. The method asclaimed in claim 10, further comprising forming a first hard mask on theinterlayer dielectric layer before removing the upper portion of thegate structure.
 13. The method as claimed in claim 12, wherein sealingthe trench comprises forming a sealing spacer on a sidewall of theinterlayer dielectric layer to fill a portion of the trench.
 14. Themethod as claimed in claim 13, further comprising forming a second hardmask over the gate structure, wherein the second hard mask has a topsurface that is coplanar with the sealing spacer and the interlayerdielectric layer.
 15. The method as claimed in claim 14, wherein formingthe second hard mask comprises: depositing a material layer of thesecond hard mask over the sealing spacer and the gate structure;planarizing the material layer of the second hard mask to be coplanarwith the first hard mask; and removing the first hard mask, an upperportion of the interlayer dielectric layer, and an upper portion of thematerial layer of the second hard mask using a planarization process.16. The method as claimed in claim 14, further comprising forming acontact in the interlayer dielectric layer and to be in contact with thesource region or the drain region after the second hard mask is formedover the gate structure.
 17. A method of fabricating a semiconductordevice, comprising: forming a gate structure over a substrate; forming adisposable spacer and an inner sidewall spacer on a sidewall of the gatestructure, wherein the inner sidewall spacer is closer to the gatestructure than the disposable spacer; forming a source region and adrain region at opposite sides of the gate structure; depositing aninterlayer dielectric layer around the disposable spacer; etching backthe gate structure; removing the disposable spacer and a first portionof the inner sidewall spacer to form a trench between a second portionof the inner sidewall spacer and the interlayer dielectric layer; andforming a sealing spacer to fill a portion of the trench, wherein anair-gap is between the sealing spacer and the substrate; sealing thetrench to form an air-gap spacer.
 18. The method as claimed in claim 17,wherein a thickness of the disposable spacer is greater than a thicknessof the inner sidewall spacer.
 19. The method as claimed in claim 17,wherein the sealing spacer is in direct contact with the inner sidewallspacer.
 20. The method as claimed in claim 17, wherein a top surface ofthe sealing spacer is higher than top surface of the gate structure andlower than a top surface of the interlayer dielectric layer.